Electronic Structure of a Nitrogen Vacancy in Cubic Gallium Nitride

1998 ◽  
Vol 209 (1) ◽  
pp. 63-79 ◽  
Author(s):  
V.A. Gubanov ◽  
A.F. Wright ◽  
J.S. Nelson ◽  
C.Y. Fong ◽  
Z.W. Lu ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Gallium Nitride ◽  
Nitrogen Vacancy

scholarly journals Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Lili Cai ◽  
Cuiju Feng
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Lower Energy ◽  
Density Functional ◽  
Nitrogen Vacancy ◽  
Main Peak ◽  
Generalized Gradient ◽  
Vacancy Defects ◽  
Gallium Vacancy ◽  
Defect Levels

The effect of gallium vacancy (VGa) and nitrogen vacancy (VN) defects on the electronic structure and optical properties of GaN using the generalized gradient approximation method within the density functional theory were investigated. The results show that the band gap increases in GaN with vacancy defects. Crystal parameters decrease in GaN with nitrogen vacancy (GaN:VN) and increase in GaN with gallium vacancy (GaN:VGa). The Ga vacancy introduces defect levels at the top of the valence band, and the defect levels are contributed by N2p electron states. In addition, the energy band shifts to lower energy in GaN:VNand moves to higher energy in GaN:VGa. The level splitting is observed in the N2p states of GaN:VNand Ga3d states of GaN:VGa. New peaks appear in lower energy region of imaginary dielectric function in GaN:VNand GaN:VGa. The main peak moves to higher energy slightly and the intensity decreases.

Electronic structure of a hydrogenated gallium nitride nanoparticle

2015 ◽  
Vol 252 (10) ◽  
pp. 2317-2322 ◽  
Author(s):  
Francisco Carlos Lavarda ◽  
Ziani de Souza Schiaber ◽  
Leonardo de Conti Dias Aguiar ◽  
Eliezer Fernando Oliveira ◽  
Douglas Marcel Gonçalves Leite ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Gallium Nitride

Electronic Structure of a Nitrogen Vacancy in Cubic Gallium Nitride

1995 ◽  
Vol 395 ◽  
Author(s):  
V.A. Gubanov ◽  
A.F. Wright ◽  
J.S. Nelson ◽  
C.Y. Fong ◽  
B. M. Klein
Keyword(s):  
Gallium Nitride ◽  
Tight Binding ◽  
Spatial Localization ◽  
Nitrogen Vacancy ◽  
Relaxation Energy ◽  
Zinc Blende ◽  
Density Maps ◽  
Densities Of States ◽  
Vacancy Site ◽  
Zinc Blende Structure

ABSTRACTA nitrogen vacancy in zinc-blende structure gallium nitride (c-GaN) is investigated by the plane-wave pseudopotential (PWPP) and tight binding-linear combination of muffin tin orbitals (TB-LMTO) methods using 32- and 64- atom supercells. The relaxation of the nearest Ga atom to the vacancy site is found to be inward by 0.069 a.u., with a relaxation energy of 0.04 eV/N-atom vacancy. The shell-projected, total and partial densities of states and the charge density maps are obtained to provide detailed information on energy and spatial localization of the N vacancy states.

Electronic structure and optical properties of novel monolayer gallium nitride and boron phosphide heterobilayers

2018 ◽  
Vol 20 (44) ◽  
pp. 28124-28134 ◽  
Author(s):  
A. Mogulkoc ◽  
Y. Mogulkoc ◽  
M. Modarresi ◽  
B. Alkan
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Gallium Nitride ◽  
Electric Field ◽  
Band Gap ◽  
External Electric Field ◽  
Charge Distribution ◽  
Energy Band ◽  
Energy Band Gap ◽  
Boron Phosphide

An external electric field modifies the electronic structure, charge distribution and energy band gap in the heterobilayer of gallium nitride/boron phosphide.

scholarly journals Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride

1999 ◽  
Vol 60 (3) ◽  
pp. 1746-1751 ◽  
Author(s):  
I. A. Buyanova ◽  
Mt. Wagner ◽  
W. M. Chen ◽  
N. V. Edwards ◽  
B. Monemar ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Gallium Nitride ◽  
Luminescence Center

The electronic structure of gallium nitride

1993 ◽  
pp. 404-409 ◽  
Author(s):  
Maurizia Palummo ◽  
Carlo M. Bertoni ◽  
Lucia Reining ◽  
Fabio Finocchi
Keyword(s):  
Electronic Structure ◽  
Gallium Nitride
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